Bismuth Nanoline Publications  

Here is a list of papers relating to Bi nanolines, as discussed in a review article entitled, "Self-assembled nanowires on semiconductor surfaces", which has been published by the Journal of Materials Science. More details about the Bi nanolines themselves are available at my Bi nanoline page. This page aims to be a complete list of papers relating to Bi nanolines, and I intend to keep it up to date. From the list below, 2005 was a good year for Bi nanoline papers, and 2006 looks like following suit! I will finish adding doi: links, citations (just my own papers at the moment, sorry) and links to the journals involved, when I get time. Arranged by year right now, but also probably good to arrange them into subcategories eventually.

I am trying to keep up to date on these, so if there's something I have missed, please let me know. Any suggestions, additions, corrections, welcome.

2008

  1. Nanostructure formation aided by self-organised Bi nanolines on Si(001)
    G. P. Srivastava and R. H. Miwa
    Appl. Surf. Sci.  254  8075--8082  (2008)  10.1016/j.apsusc.2008.03.079
  2. Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface
    Q. H. Wang and M. C. Hersam
    Journal of the American Chemical Society  In Press    (2008)  10.1021/ja806123j
  3. Theoretical investigation of Mn adsorbates aside self-organised Bi nanolines on hydrogenated Si(001) surface
    A. Z. AlZahrani, G. P. Srivastava, and R. H. Miwa
    Surface Science  602  2789--2795  (2008)  10.1016/j.susc.2008.07.009
  4. Iron silicide wires patterned by Bi nanolines on the H/Si(001) surface: Spin density functional calculations
    R. H. Miwa, W. Orellana, and G. P. Srivastava
    Physical Review B  78  115310  (2008)  10.1103/PhysRevB.78.115310
  5. Nanolines on Silicon Surfaces
    A. B. McLean, I. G. Hill, J. A. Lipton-Duffin, J. M. MacLeod, R. H. Miwa, and G. P. Srivastava
    Int. J. Nanotechnology  5  1018-1057  (2008)  10.1504/IJNT.2008.019830

2007

  1. A theoretical study of Fe adsorption along Bi-nanolines on the H/Si(0 0 1) surface
    R. H. Miwa, W. Orellana, and G. P. Srivastava
    Appl. Surf. Sci.  254  96-98  (2007)  10.1016/j.apsusc.2007.07.091
  2. An STM Observation of Adsorption of CuPc on the Si(001) surface with Bi-line structures
    S. Nakamura, S. Kashirajima, Y. Johdai, Y. Yoshiiwa, M. Naitoh, S. Nishigaki, Y.Shimizu, T. Ikari and F. Shoji,  Surface Review and Letters  14  957  (2007)  10.1142/S0218625X07010354
  3. Misoriented Bi dimers blocking Ag nanowire growth along the Bi nanoline: a first-principles study
    H. Koga and T. Ohno
    J. Phys. Condens. Matt.  19  396004  (2007)  10.1088/0953-8984/19/39/396004
  4. First-principles study of the geometry of Ag nanowires growing on a self-assembled Bi nanoline
    H. Koga and T. Ohno
    J. Phys. Condens. Matt.  19  365225  (2007)  10.1088/0953-8984/19/36/365225
  5. Growth of noble metal nanostructures on the Bi nanoline surface: A first-principles study
    H. Koga and T. Ohno
    Materials Science and Engineering: B  140  160-165  (2007)  10.1016/j.mseb.2007.03.014
  6. A theoretical study of Ge adsorption on Si(001) covered with Bi nanolines
    R. H. Miwa and G. P. Srivastava
    Surf. Sci.  601  3707--3710  (2007)  10.1016/j.susc.2007.04.002
  7. Theoretical Analysis for Possible Applications of Bismuth Nanolines in Molecular Electronics.
    R. V. Belosludov, A. A. Farajian, H. Mizuseki, K.Miki, and Y. Kawazoe
    Phys. Rev. B  75  113411  (2007)  10.1103/PhysRevB.75.113411
  8. First-principles study of the stability of atomic Ag lines epitaxial to self-assembled Bi nanolines
    H. Koga and T. Ohno
    J. Phys. Condens. Matt.  19  226213  (2007)  10.1088/0953-8984/19/26/266213

2006

  1. First-principles study of Ag adsorption on the H-passivated Si(001) surface with Bi nanolines
    H. Koga and T. Ohno
    Phys. Rev. B  74  125405  (2006)  10.1103/PhysRevB.74.125405
  2. 5-7-5 line defects on As / Si(100): A general stress-relief mechanism for V/IV surfaces
    W. E. McMahon, I. G. Batyrev, T. Hannappel, J. M. Olson and S. B. Zhang
    Phys. Rev. B  74  033304  (2006)  10.1103/PhysRevB.74.033304
  3. Fe adatoms along Bi lines on H/Si(001)
    W. Orellana and R. H. Miwa
    Appl. Phys. Lett.  89  093105  (2006)  10.1063/1.2236558
  4. In nanolines and nanoclusters on self-assembled Bi-lines
    R. H. Miwa and G. P. Srivastava
    Surf. Sci.  600  4048-4051  (2006)  10.1016/j.susc.2006.01.121
  5. Growth of Ag nanoclusters on a 1-nm template
    J. H. G. Owen and K. Miki Surf. Sci.  600  2943-2953  (2006)  10.1016/j.susc.2006.05.046
  6. Self-assembled nanowires on semiconductor surfaces
    J. H. G. Owen, K. Miki and D. R. Bowler J. Mat. Sci.  41(14)  4568-4603  (2006)  10.1007/s10853-006-0246-x
  7. 1-D semiconducting atomic chain of In and Bi on Si(001)
    D. R. Bowler, C. F. Bird and J. H. G. Owen
    J. Phys.: Condens. Matter  18  L241-L249  (2006)  10.1088/0953-8984/18/19/L03
  8. Structural and Electronic Properties of III-V Bismuth compounds
    M. Ferhat and A. Zaoui
    Phys. Rev. B  73  115107  (2006)  10.1103/PhysRevB.73.115107
  9. Reply to Comment on 'Bi nanolines on Si(001): registry with the substrate'
    R. H. Miwa, J. M. MacLeod, A. B. McLean and G. P. Srivastava,  Nanotechnology  17  1803-1805  (2006)  10.1088/0957-4484/17/6/N02
  10. Bi nanolines on Si(001): registry with substrate
    D. R. Bowler, J. H. G. Owen and K. Miki,  Nanotechnology  17  1801-1802  (2006)  10.1088/0957-4484/17/6/N01
  11. 1-D Epitaxial Growth of Indium on a Self-Assembled atomic-scale Bismuth template
    J. H. G. Owen and K. Miki Nanotechnology  17  430-433  (2006)  10.1088/0957-4484/17/2/014
  12. Dynamic formation process of Bi line structure on Si(100) surface
    J. T. Wang, D. S. Wang, E. G. Wang, H. Mizueki, Y. Kawazoe, M. Naitoh and S. Nishigaki Comput. Mater. Sci.  36  135-138  (2006)  10.1016/j.commatsci.2005.02.016

2005

  1. Identification of intermediate linear structure formed during Bi/Si(001) surface anneal
    J. H. G. Owen, D. R. Bowler, S. Kusano and K. Miki Surf. Sci.  596  163-175  (2005)  10.1016/j.susc.2005.09.012
  2. The electronic origin of contrast reversal in bias-dependent STM images of nanolines
    J. M. MacLeod, R. H. Miwa, G. P. Srivastava and A. B. McLean Surf. Sci.  576  116  (2005)  10.1016/j.susc.2004.11.045
  3. Group V dimers on Si(001): can they act as Lewis bases ?
    D. R. Bowler Surf. Sci.  595  233-238  (2005)  10.1016/j.susc.2005.08.017
  4. Surface bismuth removal after Bi nanoline encapsulation in silicon
    S. Yagi, W. Yashiro, K. Sakamoto and K. Miki
    Surf. Sci. Lett.  595  L311-L317  (2005)  10.1016/j.susc.2005.08.013
  5. Thin bismuth film as a template for pentacene growth
    J. T. Sadowski, T. Nagao, S. Yaginuma, Y. Fujikawa, A. Al-Mahboob, K. Nakajima, T. Sakurai, G. E. Thayer and R. M. Tromp
    Appl. Phys. Lett.  86  073109  (2005)  10.1063/1.1865350
  6. Strong lateral growth and crystallization via two-dimensional allotropic transformation of semi-metal Bi film
    T. Nagao, S. Yaginuma, M. Saito, T. Kogure, J. T. Sadowski, T. Ohno, S. Hasegawa and T. Sakurai
    Surf. Sci.  590  247-252  (2005)  10.1016/j.susc.2005.06.004
  7. Engineering atomic and molecular nanostructures at surfaces
    J. V. Barth, G. Costantini and K. Kern
    Nature  437  671-679  (2005)  10.1038/nature04166
  8. Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure
    O. Sakata, W. Yashiro, D. R. Bowler, A. Kitano and K. Miki
    Phys. Rev. B  72  121407(R)  (2005)  10.1103/PhysRevB.72.121407
  9. The equilibrium geometry and electronic structure of Bi nanolines on clean and hydrogenated Si(001) surfaces
    R. H. Miwa, J. M. MacLeod, A. B. McLean and G. P. Srivastava
    Nanotechnology  16  2427-2435  (2005)  10.1088/0957-4484/16/10/073
  10. Dynamic Ad-Dimer Twisting Assisted Nanowire Self-Assembly on Si(001)
    J. T. Wang, E. G. Wang, D. S. Wang, H. Mizueki, Y. Kawazoe, M. Naitoh and S. Nishigaki
    Phys. Rev. Lett.  94  226103  (2005)  10.1103/PhysRevLett.94.226103
  11. Rotation of ad-dimers in the initial stages of Bi and Si deposition on the Si(001) surface
    K. Chuasiripattana and G. P. Srivastava
    Phys. Rev. B  71  153312  (2005)  10.1103/PhysRevB.71.153312
  12. The electronic properties of Si(001)--Bi(2xn)
    A. G. Mark, J. A. Lipton-Duffin, J. M. MacLeod, R. H. Miwa, G. P. Srivastava and A. B. McLean
    J. Phys. Cond. Matt.  17  571-580  (2005)  doi:10.1088/0953-8984/17/4/001
  13. STM observation of Bi line structures on the Si(100) surface with Ag deposition
    T. Itoh, S. Kashirajima, M. Naitoh, S. Nishigaki and F. Shoji
    Appl. Surf. Sci.  244  161-165  (2005)  doi:10.1016/j.apsusc.2004.10.076
  14. The geometry of Bi nanolines on Si(001)
    R. H. Miwa, J. M. MacLeod, G. P. Srivastava and A. B. McLean
    Appl. Surf. Sci.  244  157-160  (2005)  10.1016/j.apsusc.2004.10.075
  15. Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001)
    R. Ragan, S. Kim, X. Li and R. S. Williams
    Appl. Phys. A  80  1339-1342  (2005)  10.1007/s00339-004-3162-4

2004

  1. Behaviors of surfactant atoms on Si(001) surface
    H. Matsuhata, K. Sakamoto and K. Miki
    J. El. Microsc.  53  325-337  (2004)  10.1093/jmicro/dfh043
  2. Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure
    J. M. MacLeod, C. P. Lima, R. H. Miwa, G. P. Srivastava and A. B. McLean
    Mat. Sci. Technol.  20  951  (2004)  10.1179/026708304225019894
  3. Atomic-scale Nanowires: Physical and Electronic Structure
    D. R. Bowler
    J. Phys. Cond. Matt.  16  R721-R754  (2004)  10.1088/0953-8984/16/24/R01 5 Citations
  4. Stress Relief from missing dimers on Bi/Si(001)
    Y. He and J. G. Che
    Surf. Sci.  569  176-184  (2004)  doi:10.1016/j.susc.2004.07.036
  5. Atomic structure of Bi-dimer row selectively adsorbed on Si(5512)-2x1 surface
    A. Cho and J. M. Seo
    Surf. Sci.  565  14-26  (2004)  10.1016/j.susc.2004.07.004
  6. Short-range and long-range strain fields of Bi atomic lines
    J. H. G. Owen, D. R. Bowler and K. Miki
    Mat. Sci. Technol.  20  955  (2004) 
  7. Self-organised wires and antiwires on semiconductor surfaces
    G. P. Srivastava and R. H. Miwa
    Appl. Surf. Sci.  235  293  (2004)  10.1016/j.apsusc.2004.05.102
  8. Single 2x1 domain orientation on Si(001) surfaces using aperiodic Bi line arrays
    J. M. MacLeod and A. B. McLean
    Phys. Rev. B  70  R041306  (2004)  DOI: 10.1103/PhysRevB.70.041306

2003

  1. Structural Analysis of Bismuth Nanowire by X-Ray Standing Wave Method
    A. Saito, K. Matora, T. Kurata, J. Maruyama, Y. Kuwahara, K. Miki and M. Aono
    Jpn. J. Appl. Phys. Pt.1  42  2408-2411  (2003)  10.1143/JJAP.42.2408
  2. Stability of Sb line structures on Si(001)
    J. T. Wang, H. Mizuseki, Y. Kawazoe, T. Hashizume, M. Naitoh, D. S. Wang and E. G. Wang
    Phys. Rev. B  67  193307  (2003)  10.1103/PhysRevB.67.193307
  3. Interaction between strain and electronic structure in the Bi nanoline
    J. H. G. Owen, D. R. Bowler and K. Miki
    Surf. Sci. Lett.  527  L177-183  (2003)  10.1016/S0039-6028(03)00029-3 9 Citations
  4. Self-organized, one-dimensional Pt nanowires on Ge(001)
    O. Gurlu, O. A. O. Adam, H. J. W. Zandvliet and B. Poelsema
    Appl. Phys. Lett.  83  4610-4612  (2003)  10.1063/1.1630383

2002

  1. Ab initio study of the self-organised Bi-lines on the Si(0 0 1) surface
    R. H. Miwa, T. M. Schmidt and G. P. Srivastava
    Surf. Sci.  507-510  368-373  (2002)  10.1016/S0039-6028(02)01273-6
  2. Adsorption of V-group elements and oxygen on Si(001)2x1 surface
    T. V. Afanasieva, I. F. Koval and N. G. Nakhodkin
    Surf. Sci.  507-510  789-796  (2002)  doi:10.1016/S0039-6028(02)01405-X
  3. Bi nanoline passivity to attack by radical hydrogen or oxygen
    J. H. G. Owen, D. R. Bowler and K. Miki
    Surf. Sci. Lett.  499  L124-L128  (2002)  10.1016/S0039-6028(01)01912-4 12 Citations
  4. Stress Relief as the Driving Force for Self-Assembled Bi Nanolines
    J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom and D. R. Bowler
    Phys. Rev. Lett.  88  226104  (2002)  10.1103/PhysRevLett.88.226104 19 Citations
  5. Structure of Bi nanolines: using tight-binding to explore parameter space
    D. R. Bowler and J. H. G. Owen
    J. Phys. Cond. Matt.  14  6761  (2002)  10.1088/0953-8984/14/26/314 6 Citations
  6. Self-organized Bi lines on the Si(001) surface: A theoretical study
    R. H. Miwa and G. P. Srivastava
    Phys. Rev. B  66  235317  (2002)  10.1103/PhysRevB.66.235317

2001

  1. Steps on As-Terminated Ge(001) Revisited: Theory versus Experiment
    S. B. Zhang, W. E. McMahon, J. M. Olson and S. Wei
    Phys. Rev. Lett.  87  166104  (2001)  10.1103/PhysRevLett.87.166104
  2. Scanning tunneling microscopy observation of Bi-induced surface structures on the Si(100) surfaces
    M. Naitoh, M. Takei, S. Nishigaki, N. Oishi and F. Shoji
    Surf. Sci.  482-485  1440-1444  (2001)  10.1016/S0039-6028(01)00860-3
  3. Surface roughening at the one-monolayer Sb/Si(100) interface
    A. A. Saranin, A. V. Zotov, V. G. Kotlyar, V. G. Lifshits, O. Kubo, T. Harada, T. Kobayashi, N. Yamaoka, M. Katayama and K. Oura
    Phys. Rev. B  65  033312  (2001)  10.1103/PhysRevB.65.033312
  4. STM study of structural changes on Si(001)2x1-Sb surface induced by atomic hydrogen
    O. Kubo, J. Ryu, H. Tani, T. Harada, T. Kobayashi, M. Katayama and K. Oura
    Appl. Surf. Sci.  169-170  93-99  (2001) 

2000

  1. Structures of the 'nanowire' and 2xn of Bi/Si(001)
    M. Shimomura, K. Miki, T. Abukawa and S. Kono
    Surf. Sci. Lett.  447  L169-L174  (2000) 
  2. Structure of Bi-Dimer Linear Chains on a Si(100) surface: A Scanning Tunneling Microscopy Study
    M. Naitoh, M. Takei, S. Nishigaki, N. Oishi and F. Shoji
    Jpn. J. Appl. Phys. Pt.1  39  2793  (2000)  10.1143/JJAP.39.2793
  3. Structure of atomically perfect lines of bismuth in the Si(001) surface
    D. R. Bowler
    Phys. Rev. B  62  7237  (2000)  10.1103/PhysRevB.62.7237

1999

  1. Bismuth and antimony nanolines in a Si epitaxial layer
    K. Miki, H. Matsuhata, K. Sakamoto, G. A. D. Briggs, J. H. G. Owen and D. R. Bowler
    Inst. Phys. Conf. Ser.  164  167-170  (1999) 
  2. Bismuth-induced surface structure of Si (100) studied by scanning tunneling microscopy
    M. Naitoh, H. Shimaya, S. Nishigaki, N. Oishi and F. Shoji
    Appl. Surf. Sci.  142  38-42  (1999)  10.1016/S0169-4332(98)00635-7
  3. Bi-induced structures on Si(001)
    K. Miki, J. H. G. Owen, D. R. Bowler, G. A. D. Briggs and K. Sakamoto
    Surf. Sci.  421  397-418  (1999)  10.1016/S0039-6028(98)00870-X 41 Citations
  4. Atomically perfect bismuth lines on Si(001)
    K. Miki, D. R. Bowler, J. H. G. Owen, G. A. D. Briggs and K. Sakamoto
    Phys. Rev. B  59  14868-14871  (1999)  10.1103/PhysRevB.59.14868 33 Citations

1998

  1. Ab-initio density functional calculations for Si(001)/Bi(1 ML)-(2x1)
    S. C. A. Gay, S. J. Jenkins and G. P. Srivastava
    Surf. Sci.  402-404  641-644  (1998)  10.1016/S0039-6028(97)00924-2

1997

  1. Scanning tunneling microscopy observation of bismuth growth on Si(100) surfaces
    M. Naitoh, H. Shimaya, S. Nishigaki, N. Oishi and F. Shoji Surf. Sci.  377-379  899-903  (1997)  10.1016/S0039-6028(96)01518-X
  2. Interaction of O2 with the Bi/Si(001) system: from passivation to promoted oxidation
    I. F. Koval, P. V. Melnik, N. G. Nakhodkin, M. Y. Pyatinsky and T. V. Afanasieva
    Surf. Sci. Lett.  384  L844-L847  (1997)  10.1016/S0039-6028(97)00285-9
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