Publications and Conference Presentations
James Owen's Publications and Conference Presentations

Here is a list of my peer-reviewed journal publications, conference proceedings papers and presentations in chronological order, most-recent first. I have 54 peer-reviewed papers published, including conference papers; 24 first author. My average citations per paper is 21, and I have an h-index of 18. Currently I have 3 papers in preparation or submitted. I have given many presentations at international conferences, both talks and posters.

Direct DOI links to the papers at the journal websites are provided.

(i): Currently in preparation or submitted

  1. Bi nanoline nucleation by Bond Rotation mechanism
    D. R. Bowler and J. H. G. Owen,      In Preparation  (2008) 
  2. Direct observation of Si-in-Si nanoline on Si(001)
    J. H. G. Owen, F. Bianco, S. A. Koester, D. Mazur, and C. R. Renner
        In Preparation  (2009) 
  3. Electronic structure of Bi lines on clean and H-passivated Si(100)
    J. Javorský, J. H. G. Owen, K. Miki, and M. Setvín
    In Preparation      (2009) 

(ii): Refereed papers

  1. Competing interactions in molecular adsorption: NH3 on Si(001)
    J. H. G. Owen
    J. Phys: Cond. Mat.  21  443001  (2009)  10.1088/0953-8984/21/44/443001
  2. The Origin of Inter-dimer-row correlated adsorption for NH3 on Si(001)
    J. H. G. Owen and D. R. Bowler
    Surf. Sci.  603  2902-2906  (2009)  10.1016/j.susc.2009.07.042
  3. Co-adsorption patterns of NH3 on Si(001) : Comment on ``The ordering of the adsorbed NH3 molecules across the Si dimer rows on the Si(001) surface''
    J. H. G. Owen and D. R. Bowler
    Surf. Sci.  602  3760-3762  (2008)  10.1016/j.susc.2008.09.045 3 Citations
  4. A scanning tunnelling microscopy investigation into the initial stages of copper phthalocyanine growth on passivated silicon surfaces
    J. Gardener, J.H.G.Owen, K. Miki and S. Heutz,  Surface Science  602  843-851  (2008)  10.1016/j.susc.2007.11.031 3 Citations
  5. Al nanocluster arrays on Si(111)-7x7 surfaces: Formation process and interactions among clusters  R-W. Li, H. Liu, J. H. G. Owen, Y. Wakayama, K. Miki and H. W. Yeom  Phys. Rev. B  76  075418  (2007)  10.1103/PhysRevB.76.075418 2 Citations
  6. Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM
    D. F. Leigh, C. Norenberg, D. Cattaneo, J. H. G. Owen, K. Porfyrakis, A Li Bassi, A. Ardavan and G.A.D. Briggs,  Surf. Sci.  601  2750-2755  (2007)  10.1016/j.susc.2006.12.035 1 Citation
  7. Molecular interactions and decomposition pathways of NH3 on Si(001)
    D. R. Bowler and J. H. G. Owen,  Phys. Rev. B  75  155310  (2007)  10.1103/PhysRevB.75.155310 10 Citations
  8. Dynamic behavior and phase transition of magic Al clusters on Si(111)-7x7 surfaces  R-W. Li, J. H. G. Owen, S. Kusano and K. Miki  Appl. Phys. Lett.  89  073116  (2006)  10.1063/1.2337522 6 Citations
  9. Growth of Ag nanoclusters on a 1-nm template
    J. H. G. Owen and K. Miki Surf. Sci.  600  2943-2953  (2006)  10.1016/j.susc.2006.05.046 14 Citations
  10. Self-assembled nanowires on semiconductor surfaces
    J. H. G. Owen, K. Miki and D. R. Bowler J. Mat. Sci.  41(14)  4568-4603  (2006)  10.1007/s10853-006-0246-x 28 Citations
  11. 1D semiconducting atomic chain of In and Bi on Si(001)
    D. R. Bowler, C. F. Bird and J. H. G. Owen
    J.Phys.:Condens. Matter  18  L241-L249  (2006)  10.1088/0953-8984/18/19/L03 4 Citations
  12. Bi nanolines on Si(001): registry with substrate
    D. R. Bowler, J. H. G. Owen and K. Miki
    Nanotechnology  17  1801-1802  (2006)  10.1088/0957-4484/17/6/N01 3 Citations
  13. Thermal stability of Al nanocluster arrays on Si(111)-7 x 7 surfaces
    R. Li, S. Kusano, J. H. G. Owen and K. Miki
    Nanotechnology  17  2018-2022  (2006)  10.1088/0957-4484/17/8/038 4 Citations
  14. 1-D Epitaxial Growth of Indium on a Self-Assembled atomic-scale Bismuth template
    J. H. G. Owen and K. Miki
    Nanotechnology  17  430-433  (2006)  10.1088/0957-4484/17/2/014 17 Citations
  15. Identification of intermediate linear structure formed during Bi/Si(001) surface anneal
    J. H. G. Owen, D. R. Bowler, S. Kusano and K. Miki
    Surf. Sci.  596  163-175  (2005)  10.1016/j.susc.2005.09.012 10 Citations
  16. Distinguishing two isomers of Nd@C82 by STM and DFT
    D. F. Leigh, J. H. G. Owen, S. M. Lee, K. Porfyrakis, A. Ardavan and G. A. D. Briggs
    Chem. Phys. Lett.  414  307-310  (2005)  10.1016/j.cplett.2005.08.090 2 Citations
  17. NH3 on Si(001): Self-organized patterns of adsorbates investigated by a combination of scanning tunneling microscopy experiments and density functional theory calculations
    J. H. G. Owen, D. R. Bowler, S. Kusano and K. Miki
    Phys.Rev.B  72  113304  (2005)  10.1103/PhysRevB.72.113304 19 Citations
  18. Short-range and long-range strain fields of Bi atomic lines
    J. H. G. Owen, D. R. Bowler and K. Miki
    Mat. Sci. Technol.  20  955  (2004)  10.1179/026708304225019768 3 Citations
  19. Interaction between strain and electronic structure in the Bi nanoline
    J. H. G. Owen, D. R. Bowler and K. Miki
    Surf. Sci. Lett.  527  L177-183  (2003)  10.1016/S0039-6028(03)00029-3 20 Citations
  20. Measurement of V/III ratio using threshold photoemission
    J. J. Zinck, J. H. G. Owen and W. Barvosa-Carter
    J. Vac. Sci. Technol. B  21  1126-1128  (2003)  10.1116/1.1576398 1 Citation
  21. Structure of Bi nanolines: using tight-binding to explore parameter space
    D. R. Bowler and J. H. G. Owen
    J. Phys. Cond. Matt.  14  6761  (2002)  10.1088/0953-8984/14/26/314 20 Citations
  22. Stress Relief as the Driving Force for Self-Assembled Bi Nanolines
    J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom and D. R. Bowler
    Phys. Rev. Lett.  88  226104  (2002)  10.1103/PhysRevLett.88.226104 58 Citations
  23. Atomic scale structure of InAs(001)-(2x4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory
    W. Barvosa-Carter, R. S. Ross, C. Ratsch, F. Grosse, J. H. G. Owen and J. J. Zinck
    Surf. Sci. Lett.  499  L129-134  (2002)  10.1016/S0039-6028(01)01638-7 16 Citations
  24. Bi nanoline passivity to attack by radical hydrogen or oxygen
    J. H. G. Owen, D. R. Bowler and K. Miki
    Surf. Sci. Lett.  499  L124-L128  (2002)  10.1016/S0039-6028(01)01912-4 27 Citations
  25. In situ Threshold Photoemission Yields Correlated to Surface Reconstructions of InAs (001)
    J. J. Zinck, R. S. Ross, J. H. G. Owen, W. Barvosa-Carter, F. Grosse and C. Ratsch
    Appl. Phys. Lett.  79  2354-6  (2001)  10.1063/1.1406552 3 Citations
  26. An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface.
    D. R. Bowler, J. H. G. Owen, C. M. Goringe, K. Miki and G. A. D. Briggs
    J.Phys.:Condens. Matter  12  7655  (2000)  10.1088/0953-8984/12/35/301 14 Citations
  27. Surface reconstructions for InAs(001) studied by Density Functional Theory and STM
    C. Ratsch, W. Barvosa-Carter, F. Grosse, J. H. G. Owen and J. J. Zinck
    Phys. Rev. B  62  R7719  (2000)  10.1103/PhysRevB.62.R7719 19 Citations
  28. Growth Oscillation Decay Rates for Control of III-V Molecular Beam Epitaxy near Stoichiometry
    J. H. G. Owen, W. Barvosa-Carter and J. J. Zinck
    Appl. Phys. Lett.  76  3070-2  (2000)  10.1063/1.126582 12 Citations
  29. Bi-induced structures on Si(001)
    K. Miki, D. R. Bowler, J. H. G. Owen, G. A. D. Briggs and K. Sakamoto
    Surf. Sci.  421  397-418  (1999)  10.1016/S0039-6028(98)00870-X 67 Citations
  30. Atomically perfect bismuth lines on Si(001)
    K. Miki, D. R. Bowler, J. H. G. Owen, G. A. D. Briggs and K. Sakamoto
    Phys. Rev. B  59  14868-14871  (1999)  10.1103/PhysRevB.59.14868 71 Citations
  31. Diffusion of paired hydrogen on Si(001)
    D. R. Bowler, J. H. G. Owen, K. Miki and G. A. D. Briggs
    Phys. Rev. B  57  8790  (1998)  10.1103/PhysRevB.57.8790 26 Citations
  32. In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001).
    I. Goldfarb, J. H. G. Owen, D. R. Bowler, C. M. Goringe, P. T. Hayden, K. Miki, D. G. Pettifor and G. A. D. Briggs
    J. Vac. Sci. Technol. A  16  1938-43  (1998)  10.1116/1.581200 13 Citations
  33. Scanning tunneling microscopy study of benzene adsorption on Si(100)-(2x1).
    K. W. Self, R. I. Pelzel, J. H. G. Owen, C. Yan and W. H. Weinberg
    J. Vac. Sci. Technol. A  16  1031-6  (1998)  10.1116/1.581227 37 Citations
  34. Chemistry of [(t-butyl)GaS]4 on Si(100)-(2x1).
    R. I. Pelzel, A. B. Hopcus, J. H. G. Owen, B. Z. Nosho and W. H. Weinberg
    J. Vac. Sci. Technol. B  16  2399-2403  (1998)  10.1116/1.590181 2 Citations
  35. Competing growth mechanisms of Ge/Si(001) coherent clusters.
    I. Goldfarb, P. T. Hayden, J. H. G. Owen and G. A. D. Briggs
    Phys. Rev. B  56  10459-68  (1997)  10.1103/PhysRevB.56.10459 59 Citations
  36. Nucleation of "Hut" Pits and Clusters during GSMBE of Ge/Si(001) in in-situ STM
    I. Goldfarb, P. T. Hayden, J. H. G. Owen and G. A. D. Briggs
    Phys. Rev. Lett.  78  3959-62  (1997)  10.1103/PhysRevLett.78.3959 92 Citations
  37. Gas-source Growth of Si(001) 3:Nucleation and growth of Ge/Si(001)
    I. Goldfarb, J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe and G. A. D. Briggs
    Surf. Sci.  394  105-118  (1997)  10.1016/S0039-6028(97)00634-1 34 Citations
  38. Gas-source Growth of Si(001) 2:Effect of hydrogen
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, I. Goldfarb and G. A. D. Briggs
    Surf. Sci.  394  91-104  (1997)  10.1016/S0039-6028(97)00591-8 21 Citations
  39. Gas-source Growth of Si(001) 1:Nucleation Mechanisms
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe, I. Goldfarb and G. A. D. Briggs
    Surf. Sci.  394  79-90  (1997)  10.1016/S0039-6028(97)00592-X 20 Citations
  40. A proposed structure for the nucleus for GSMBE of Group IV semiconductors.
    J. H. G. Owen, K. Miki, D. R. Bowler, C. M. Goringe and G. A. D. Briggs
    Surf. Sci. Lett.  382  L678-85  (1997)  10.1016/S0039-6028(97)00135-0 13 Citations
  41. Hydrogen diffusion on Si(001)
    J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki and G. A. D. Briggs
    Phys. Rev. B  54  14153  (1996)  10.1103/PhysRevB.54.14153 59 Citations
  42. Identification of the Si(001) missing dimer defect structure using low bias voltage STM and LDA modelling
    J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki and G. A. D. Briggs
    Surf. Sci. Lett.  341  L1042  (1995)  10.1016/0039-6028(95)00794-6 36 Citations
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(iii): Conference Papers

  1. Self-assembly and electronic effects of Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces
    C. Norenberg, D. F. Leigh, D. Cattaneo, K. Porfyrakis, A. L. Bassi, C. S. Casari, M. Passoni, J. H. G. Owen, and G. A. D. Briggs  Journal of Physics: Conference Series 100 052080 (2008) 10.1088/1742-6596/100/5/052080
  2. Structure and Electronic Properties of Atomic-Scale In-Bi Nanowire Arrays  J. H. G. Owen, O. Kubo and D. R. Bowler,  Mat. Res. Soc. Symp. Proc. #1080-O03-06 (2008) link to MRS website #1080-O03-06 PDF
  3. Nanoline Templating of metals and the underlying surface processes.  J. H. G. Owen and K. Miki,  Mat. Res. Soc. Symp. Proc. (2007) link to MRS website #0961-O15-07 PDF
  4. Isolation, Spectroscopic Characterization, and Study of Island Formation of Two Isomers of the Metallofullerene Nd@C82 K. Porfyrakis, D. F. Leigh, J. H. G. Owen, S. M. Lee, M. Kanai, G. Morley, A. Ardavan, T. J. F. Dennis, D. G. Pettifor, and G. A. D. Briggs ECS Transactions  1  43-49  (2006)  10.1149/1.2214618
  5. Self-assembled Nanoline Template for Growth of Nanoparticles and Nanowires on Si(001).  J. H. G. Owen and K. Miki,  Mat. Res. Soc. Symp. Proc. (2006) link to MRS website #0901-Ra13-02 PDF
  6. Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM.  D. F. Leigh, C. Norenberg, D. Cattaneo, J. H. G. Owen, K. Porfyrakis, A. L. Bassi, A. Ardavan, and G. A. D. Briggs  Nano-SEA Proceedings (2006)
  7. Isolation, Spectroscopic Characterization, and Study of Island Formation of Two Isomers of the Metallofullerene Nd@C82 K. Porfyrakis, D. F. Leigh, J. H. G. Owen, S. M. Lee, M. Kanai, G. Morley, A. Ardavan, T. J. F. Dennis, D. G. Pettifor, and G. A. D. Briggs Meeting Abstracts  2  1663  (2005) 
  8. Sb-terminated InAs(001)-(2x4) and (2x8) studied using scanning tunneling microscopy and ab initio density functional theory  W. Barvosa-Carter, F. Grosse, J. H. G. Owen and J. J. Zinck  Mat.Res.Soc.Symp.Proc.  692  H841  (2002) PDF
  9. Bismuth and Antimony nanolines in a Si epitaxial layer  K. Miki, H. Matsuhata, K. Sakamoto, G. A. D. Briggs, J. H. G. Owen and D. R. Bowler.  Microscopy of Semiconducting Materials XI. Inst. Phys. Conf. Ser.  164  167  (1999)
  10. Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies.
    I. Goldfarb and J. H. G. Owen and P. T. Hayden and K. Miki and G. A. D. Briggs Microscopy of Semiconducting Materials 10, Inst. Phys. Conf. Ser.  157  597-600  (1997) 
  11. Elevated-Temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6  J. H. G. Owen, K. Miki, D. R. Bowler, G. A. D. Briggs and I. Goldfarb.  Surface Diffusion  360  245-252  (1997)
  12. STM imaging of adsorbed trimethylgallium on gallium arsenide(001)-(2x4)
    A. R. Avery, A. J. Mayne, C. M. Goringe, J. H. G. Owen, C. W. Smith, M. O. Schweitzer, T. S. Jones, G. A. D. Briggs, W. H. Weinberg  Mat. Res. Soc. Symp. Proc.  312  219  (1993)
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(iv): Presentations, talks

  1. Structure and Electronic Properties of Self-Assembled Si-in-Si(001) Nanowire.  J. H. G. Owen, Sigrun. A. Koester, Francois Bianco, Daniel Mazur, David R. Bowler and Christoph Renner  Poster Presentation at the Materials Research Society, Fall 2009 meeting, Boston, MA, USA. (Nov. 2009)
  2. Bi-nanowire templates on Si(001) for single atom wire growth  James H. G. Owen, Francois Bianco, Sigrun A. Koester, Daniel Mazur and Christoph Renner  2009 Swiss Workshop on Materials with Novel Electronic Properties Aug. 2009
  3. Nanoline Templating of atomic-scale wires on Si(001)  J.H.G.Owen  Invited Seminar at London Centre for Nanotechnology, UCL, London, UK. Jun. 2008
  4. Self-Assembled Nanoline Templating  J.H.G.Owen, D.R.Bowler and K.Miki,  IAMF/ICYS workshop, Tsukuba, Japan Mar. 2008
  5. Nanoline Templating: Self-Assembly of atomic-scale wires and clusters on Si(001)  J.H.G.Owen, D.R.Bowler and K.Miki,  Seminar at IBM Almaden, San Jose, CA, USA Mar. 2008
  6. Structure and Electronic Properties of Atomic-Scale In-Bi Nanowire Arrays  J. H. G. Owen, O. Kubo and D. R. Bowler,  Poster Presentation at the Materials Research Society, Spring 2008 meeting, San Francisco, CA, USA. (Mar. 2008)
  7. Nanoline Templating of metals and the underlying surface processes.  J. H. G. Owen and K. Miki,  Poster Presentation at the Materials Research Society, Fall 2007 meeting, Boston, MA, USA. (2007)
  8. Growth and Characterization of Atomic-scale Wires on the Si(001) surface.  J.H.G.Owen and K.Miki,  Poster Presentation at the Materials Research Society, Fall 2006 meeting, Boston, MA, USA. Nov. 2006
  9. Self-Assembled Nanostructures Using Bi Nanoline Templates  J.H.G.Owen and K.Miki,  Oral Presentation at the International Conference on Nanoscience and Technology 2006, Basel, Switzerland, Aug. 2006
  10. Self-assembled Nanoline Templates: Growth of Nanowires and Nanoparticles on Si(001)  J.H.G.Owen, D.R.Bowler and K.Miki,  Seminar at HP Research Labs, San Jose, CA, USA Nov. 2005
  11. Self-assembled Nanoline Template for Growth of Nanoparticles and Nanowires on Si(001).  J.H.G.Owen and K.Miki,  Oral Presentation at the Materials Research Society, Fall 2005 meeting, Boston, MA, USA. Nov. 2005
  12. Reaction of NH3 with the Si(001) surface and Bi nanolines  J.H.G.Owen, D.R.Bowler and K.Miki,  Poster Presentation at the American Physical Society March meeting, Los Angeles Mar. 2005
  13. Atomic-scale wires of Bi for nanoelectronic applications  J.H.G.Owen, D.R.Bowler and K.Miki,   Oral Presentation at the IOM Nanomaterials and Nanomanufacturing conference, The Royal Society, London Dec. 2003
  14. Atomic-scale Bi wires for nanoelectronics  J.H.G.Owen, D.R.Bowler and K.Miki  Invited talk, International Workshop on Active Interconnects, Atami, Japan Nov. 2003
  15. Structure of Bi nanolines  J.H.G.Owen, D.R.Bowler and K.Miki  Poster presentation ECOSSE, Malmo, Sweden. June 2002
  16. Bismuth and Antimony nanolines in a Si epitaxial layer  J.H.G.Owen, D.R.Bowler, G.A.D.Briggs and K. Miki.  Microscopy of Semiconducting Materials XII. (2001)
  17. Morphology Control in 6.1 A MBE: Effect of V/III ratio on InAs growth  J.H.G.Owen, W. Barvosa-Carter and J.J.Zinck,  Oral presentation at the conference of the Materials Research Society, Boston, Massachusetts, 30th November 1999
  18. Sensitivity of RHEED and PE sensor signatures to MBE control variables  J.H.G.Owen, J.J.Zinck,   Oral presentation at the conference of the Materials Research Society, San Francisco, California, 5th April 1999
  19. RHEED signatures for control of InAs morphology during MBE  J.H.G.Owen, J.J.Zinck,  Oral presentation at the American Physical Society, Atlanta, Georgia, 25th March 1999.
  20. Diffusion of Hydrogen on Si(001) by hot STM and computational modelling  J.H.G.Owen, D.R.Bowler, K.Miki and G.A.D.Briggs,  Oral presentation at the conference of the American Vacuum Society, San Jose, California, 20th October 1997.
  21. Hydrogen Diffusion on Si(001) using elevated-temperature STM  J.H.G.Owen, K.Miki, C.R.Wutrich, M.R. Castell and G.A.D.Briggs.  Oral presentation at STM '95, 8th Int. Conf. on STM and related techniques (1995)
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